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Bulletin I27303 01/07
GB30RF60K
IGBT PIM MODULE
Features
* * * * Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10s Short Circuit Capability Square RBSOA
VCES = 600V IC = 27A @ TC=80C tsc > 10s @ TJ =150C ECONO2 PIM VCE(on) typ. = 2.04V
* HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics * Positive VCE (on) Temperature Coefficient * Ceramic DBC Substrate * Low Stray Inductance Design * TOTALLY LEAD-FREE
Benefits
* * * * * * Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance
23
R 24
Absolute Maximum Ratings
Parameter
Inverter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Diode Maximum Forward Current Power Dissipation Input Rectifier Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I2 t (Non Repetitive) Brake Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Symbol
VCES VGES IC ICM IFM PD V RRM IF(AV) IFSM I2t VCES VGES IC ICM PD V RRM TJ TSTG VISOL
Test Conditions
Ratings
600 20
Units
V A
Continuos Pulsed One IGBT 50/60Hz sine pulse sine pulse
25C / 80C 25C 25C 25C 80C
50 / 27 100 100 129 800 30 310 525 600 20
W V A A2s V A W V C V
Rated VRRM applied, 10ms,
Continuous Pulsed One IGBT
25C / 80C 25C 25C
30 / 20 60 100 600 150 -40 to +125
AC (1 min)
2500
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance Junction-to-Case Inverter FRED Thermal Resistance Junction-to-Case Brake DIODE Thermal Resistance Junction-to-Case Brake IGBT Thermal Resistance Junction-to-Case Input Rectifier Thermal Resistance Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight RCS RJC
Symbol
Min
2.7
Typical
0.05 170
Maximum
0.97 1.42 2.44 1.25 1.03 3.3
Units
C/W
Nm g
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Inverter IGBT BV(CES) VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 V VGE = 0 IC = 500A VGE(th) ICES IGES QG QGE QGC EON EOFF ETOT EON EOFF ETOT td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area 3.5 VGE(th)/TJ Thresold Voltage temp. coefficient 0.7 2.04 2.60 2.31 3.01 -10 400 105 14 51 491 223 714 613 417 132 33 153 88 459 54 2.65 3.62 2.80 2.77 5.5 100 200 158 21 76 737 335 1072 920 626 198 50 229 132 pF VGE = 0 VCC = 30V f = 1Mhz Tj = 150C IC = 60A RG = 22 VGE = 15V to 0 10 s IP = 220A to 310A VCC = 300V RG = 47 Inverter Diode Irr Diode Peak Rev. Recovery Current 43 A Tj = 125C VCC = 300V IF = 30A L = 200H VGE = 15V RG = 22 VFM Diode Forward Voltage Drop 1.31 1.52 1.25 1.47 1.81 2.40 1.68 2.14 V IF = 30A IF = 50A IF = 30A Tj = 125C IF = 50A Tj = 125C VGE = 15V to 0 690 81 ns J J nC nA mV/C A V/C V VGE = 0 IC = 1mA (25C - 125C) IC = 30A VGE = 15V IC = 50A VGE = 15V IC = 30A VGE = 15V TJ = 125C IC = 50A VGE = 15V TJ = 125C VCE = VGE IC = 250A VCE = VGE IC = 1mA (25C-125C) VGE = 0 VCE = 600V VGE = 0 VCE = 600V Tj = 125C VGE = 20V IC = 30A VCC = 300V VGE = 15V IC = 30A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 25C
1
V(BR)CES/TJTemp. Coefficient of Breakdown Voltage
IC = 30A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 125C
1
1030 1546
IC = 30A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 125C
1834 2751
FULL SQUARE
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Input Rectifier VFM IRM rT VF(TO) Brake IGBT BV(CES) VCE(ON) Parameter Maximum Forward Voltage Drop Maximum Reverse Leakage Current Forward Slope Resistance Conduction Thresold Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1.50 V IF = 30A 600 VGE(th) VGE(th)/TJ ICES IGES QG QGE QGC EON EOFF ETOT EON EOFF ETOT td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Gate Threshold Voltage Thresold Voltage temp. coefficient Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area 4 8.8 0.79 0.6 2.07 2.51 2.49 3.06 -10 250 48 11 30 176 137 313 235 276 512 87 24 112 115 901 263 29 0.2 1 2.24 2.71 2.72 3.47 6 100 200 72 16 44 264 207 471 353 416 768 131 36 169 172 1352 395 44 pF VGE = 0 VCC = 30V f = 1Mhz Tj = 150C IC = 20A RG = 22 VGE = 15V to 0 10 s IP = 180A to 280A VCC = 300V RG = 47 Brake Diode VFM Diode Forward Voltage Drop NTC R B
1
mA m V V V/C V
Tj = 25C VR = 800V Tj = 150C VR = 800V Tj = 150C VGE = 0 IC = 500A VGE = 0 IC = 1mA (25C - 125C) IC = 20A VGE = 15V IC = 30A VGE = 15V IC = 20A VGE = 15V TJ = 125C IC =30A VGE = 15V TJ = 125C VCE = VGE IC = 250A
V(BR)CES/TJ Temp. Coefficient of Breakdown Voltage
mV/C A nA nC J
VCE = VGE IC = 1mA (25C-125C) VGE = 0 VCE = 600V VGE = 0 VCE = 600V Tj = 125C VGE = 20V IC = 15A VCC = 300V VGE = 15V IC = 15A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 25C
1
J
IC = 15A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 125C
1
ns
IC = 15A VCC = 300V VGE = 15V RG = 22 L = 200H Tj = 125C
FULL SQUARE
VGE = 15V to 0
Irr
Diode Peak Rev. Recovery Current
-
28 1.61 1.79 1.57 1.73 5000 4933 3375
1.71 1.99 1.66 1.83 -
A V
VCC = 300V IF = 15A L = 200H VGE = 15V to 0 RG = 22 IF = 20A IF = 30A IF = 20A Tj = 125C IF = 30A Tj = 125C
Resistance B Value
-
K
Tj = 25C Tj = 100C Tj = 25C / 50C
Energy Losses include "tail" and diode reverse recovery
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
60 50 40 30 20 10 0 0 1 2 3 Vce (V) 4 5
Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V
Inverter
90 75 60 45 30 15 0 0 2 Vce (V) 4 6
Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V
Ice (A)
Ice (A)
Fig. 1 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 2 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
20
400 Tj = 25C Tj = 125C
300 Ice (A)
15 Vce (V)
Ice=15A Ice=30A Ice=60A
200
10
100
5
0 0 6 9 12 15 Vge (V) Fig. 3 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 3
0 5 15 Vge (V) Fig. 4 - Typical VCE vs. VGE TJ = 25C 10 20
20 16 12 8 4 0 5 10 Vge (V) 15 20
10000
Capacitance (pF)
Ice=15A Ice=30A Ice=60A
Cies 1000 Coes 100 Cres
Vce (V)
10 0 20 40 60 Vce (V) 80 100
Fig.5 - Typical VCE vs. VGE TJ = 125C
Document Number: 94479
Fig. 6- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz
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GB30RF60K
Inverter
16 14 12 10 VGE (V) 8 6 4 2 0 0 20 40 60 80 100 QG, Total Gate Charge (nC) 120
15 0 0 0.5 1 Vf (V) 1.5 2 90
Bulletin I27303 01/07
300V
75 60 If (A) 45 30
Tj = 25C Tj = 125C
Fig. 7 - Typical Gate Charge vs. VGE ICE = 30A
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
1.6 ETOT 1.2 Energy (mJ) EON EOFF 0.4
Swiching Time (s)
1 tdOFF tF tdON tR 0.1
0.8
0 30 40 50 60 Ic (A) Fig. 9 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 300V,RG= 22; VGE= 15V
1.2
0.01
10
20
45 55 65 Ic (A) Fig. 10 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 300V,RG= 22;VGE= 15V
1
25
35
E (TOT)
Swiching Time (s)
1
Energy (mJ)
0.8
tdOFF 0.1 tF tdON tR
0.6
E (ON)
0.4
E (OFF)
0.2 0 10 20 30 40 50
0.01 20 30 40 50 Rg ( ) Fig. 12- Typ. Switching Time vs. RG TJ = 125C; L=200H; VCE= 300V, ICE= 30A; VGE= 15V
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0
10
Rg () Fig. 11 - Typ. Energy Loss vs. RG TJ = 125C; L=200H; VCE= 300V, ICE= 30A; VGE= 15V
Document Number: 94479
GB30RF60K
Bulletin I27303 01/07
55 50
Rg = 4.7
Inverter
50
45 Irr (A)
45 Irr (A) 40 35 30 25 0
Rg = 10 Rg = 22
40
Rg = 33 Rg = 47
35
30
30 40 50 60 70 If (A) Fig. 13 - Typical Diode IRR vs. IF TJ = 125C
14 12
10
20
0
10
20 30 Rg ( )
40
50
Fig. 14 - Typical Diode IRR vs. RG TJ = 125C; IF = 30A
50
Thermistor
45 Irr (A)
Thermistor Resistance ( k)
10 8 6 4 2
40
35
1000 1200 1400 dif/dt (A/s) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 30A; TJ = 125C
Istantaneous Forward Current IF (A) 90 75 60 45 30 15 0 0 0.5 1 Tj = 25C Tj = 125C
30 600
0
800
0
20
40
60
80
100
120
140
160
180
T J , Junction Temperature (C)
Fig. 16 - Thermistor Resistance vs. Temperature
Input Rectifier
1.5
2
Forward Voltage Drop VF (V)
Fig. 17- Typ. Diode Forward Characteristics tp = 80s
Document Number: 94479
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GB30RF60K
Inverter
Bulletin I27303 01/07
1
0.5 JC) Thermal Response (Zth 0.3 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
R1 R1 R2 R2
0.1
T J
J
1
TC
1 2 2
0.01
Ri (C/W) i (sec) 0.2582 0.000393 0.7117 0.026554
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc
Ci= i/Ri Ci i/Ri
0.001 1E-05
1E-04
1E-03 1E-02 t1 , Rectangular Pulse Duration (sec)
1E-01
1E+00
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
JC) Thermal Response (Zth
1
0.5 0.3 0.1
TJ
J 1 R1 R1 2 R2 R2 R3 R3
TC
1 2 3 3
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Ci= i/Ri Ci= i/Ri
Ri (C/W) i (sec) 0.000196 0.228 0.001288 0.377 0.043359 0.815
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc
0.01 1E-05
1E-04
1E-03 1E-02 t1 , Rectangular Pulse Duration (sec)
1E-01
1E+00
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
Brake
30
30
Ice (A)
20
Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V
20 Ice (A)
Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V
10
10
0 0 1 2 Vce (V) 3 4
0 0 1 2 Vce (V) 3 4
Fig. 20 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 21 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
70 60 50 Ice (A)
20
15 Vce (V)
Ice=5A Ice=20A Ice=30A
40 30 20 10 0 4 6 8 10 Vge (V) 12 14 Tj = 25C Tj = 125C
10
5
0 5 10 Vge (V) 15 20
Fig. 22 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
20 16 12 8 4 0 5 10 Vge (V) 15 20
10000
Fig. 23 - Typical VCE vs. VGE TJ = 25C
Capacitance (pF)
Ice=5A Ice=20A Ice=30A
Cies 1000 Coes 100 Cres 10 0
Vce (V)
Fig.24- Typical VCE vs. VGE TJ = 125C
Document Number: 94479
40 60 80 100 Vce (V) Fig. 25- Typ. Capacitance vs. VCE VGE= 0; f = 1MHz
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20
Brake
16 300V 12
GB30RF60K
Bulletin I27303 01/07
30 25 20
VGE (V)
8
If (A)
15 10 Tj = 25C Tj = 125C
4
5
0 0 20 40 QG, Total Gate Charge (nC)
0 0 0.5 1 Vf (V) 1.5 2
Fig. 26 - Typical Gate Charge vs. VGE ICE = 15A
0.7 0.6
Fig. 27 - Typ. Diode Forward Characteristics tp = 80s
1
Swiching Time (s)
ETOT Energy (mJ) 0.5 0.4 0.3 EON 0.2 0.1 4 7 10 EOFF 13 Ic (A) 16 19 22
tF tdOF 0.1
F
tdO
N
tR 0.01 10 14 Ic (A) 18 22
Fig. 28 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 300V,RG= 22; VGE= 15V
0.6 E (TOT)
Fig. 29 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 300V,RG= 22;VGE= 15V
1
0.4
Swiching Time (s)
0.5
Energy (mJ)
0.1
0.3 E (OFF) 0.2 E (ON) 0.1 0 10 20 30 40 50
tF tdOFF tdON
0.01 0
tR 10 20 30 Rg ( ) 40 50
Rg () Fig. 30 - Typ. Energy Loss vs. RG TJ = 125C; L=200H; VCE= 300V, ICE= 15A; VGE= 15V
Document Number: 94479
Fig. 31 - Typ. Switching Time vs. RG TJ = 125C; L=200H; VCE= 300V, ICE= 15A; VGE= 15V
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GB30RF60K
Bulletin I27303 01/07
35 30 Irr (A) 25 20 15 10 0
Rg = 4.7 Rg = 10 Rg = 22 Rg = 33 Rg = 47
Brake
40
30 Irr (A)
20
10
0
5
10 15 If (A)
20
25
0
10
20 30 Rg ( )
40
50
Fig. 32 - Typical Diode IRR vs. IF TJ = 125C
Fig. 33- Typical Diode IRR vs. RG TJ = 125C; IF = 15A
40
30 Irr (A)
Document Number: 94479
20
10
500 600 700 dif/dt (A/s) Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V; VGE= 15V; ICE= 15A; TJ = 125C
0 400
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Brake
10
GB30RF60K
Bulletin I27303 01/07
JC) Thermal Response (Zth
1
0.5 0.3
TJ
J 1 R1 R1 2 R2 R2 R3 R3
0.1
TC
1 2 3 3
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Ci= i/Ri Ci= i/Ri
Ri (C/W) i (sec) 0.000207 0.256 0.00051 0.225 0.023774 0.769
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc
0.01 1E-05
1E-04
1E-03 1E-02 t1 , Rectangular Pulse Duration (sec)
1E-01
1E+00
Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT)
10
JC) Thermal Response (Zth
1
0.5 0.3 0.1 0.05
R1 R1 R2 R2 2 R3 R3
TJ
J 1
TC
1 2 3 3
0.1
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Ci= i/Ri Ci= i/Ri
Ri (C/W) i (sec) 0.000114 0.342 0.001417 0.856 0.035743 1.242
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc
0.01 1E-05
1E-04
1E-03 1E-02 t1 , Rectangular Pulse Duration (sec)
1E-01
1E+00
Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode)
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
R=
VCC ICM
diode clamp/ DUT L
+
VGE 1mA
-+
VCC 5V DUT/ DRIVER
-
+ -
VCC
IC
RG
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp/ DUT L
+
DUT
-+
VCC 5V DUT/ DRIVER
-
+ -
VCC
RG
RG
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
+ VCC -
RG
Fig.C.T.5 - Resistive Load Circuit
Document Number: 94479
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GB30RF60K
Bulletin I27303 01/07
Econo2 PIM Package Outline
Dimensions are shown in millimeters (inches)
Econo2 PIM Part Marking Information
LOT Made in Italy
GB30RF60K
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
Document Number: 94479
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 01/07 www.vishay.com 13
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
Document Number: 99901 Revision: 12-Mar-07
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